Research & Development

Hitachi Energy and Larsen & Toubro (L&T) partner to deliver major offshore HVDC transmission links for TenneT, accelerating Europe’s grid expansion and integrating large‑scale renewable wind power. (Source: Hitachi)

Sintered die attach, copper interconnects and ceramic‑brazed substrates replace solder and wire bonds to dramatically extend SiC/GaN module lifetime, reduce thermal resistance and cut commutation inductance for next‑gen high‑speed switching. (Source: © yasna - stock.adobe.com)

Agrivoltaics is also known as solar farms, agrophotovoltaics, agrisolar, and dual-use solar. (Source: © Anas - stock.adobe.com)

The 200 mm SiC ramp and Chinese substrate price pressure are reshaping power‑semiconductor economics while GaN supply moves to new foundries and 300 mm lines — a bifurcated market with GaN density below 650 V and SiC dominance above 1.2 kV. (Source: © roei - stock.adobe.com)

This article shares an overview of selecting gate drivers for silicon and wide-bandgap semiconductors. (Source: © starush - stock.adobe.com)

UMC and SILITH achieve mass production of 1.6T silicon photonics wafers at UMC’s 12‑inch Singapore fab, moving the platform from development to high‑volume manufacturing for AI and hyperscale data‑center interconnects. (Source: © Art_You - stock.adobe.com)

Q2 2026 saw component markets tighten faster than at any point since the 2021–22 shortage: DRAM contract prices surged, lead times moved to allocation (Micron DDR4 at ~52 weeks), SiC substrate supply showed renewed tightness as fabs scale to 200 mm, and passive parts such as MLCCs hit multi‑week lead times — squeezing AI, automotive and data‑center builds. (Source: © Gorodenkoff - stock.adobe.com)

Practical mathematical methods to size storage, set dynamic impedance targets and budget nanoamp quiescent losses — ensuring reliable startup and sustained operation for energy‑harvesting sensor nodes. (Source: © Jai Izzam - stock.adobe.com)

Researchers from EPC, The University of Hong Kong and Virginia Tech demonstrated a fully integrated GaN boost converter operating entirely at 4 K, achieving 91.6% efficiency at 7.6 W by combining monolithic GaN power ICs, on‑chip gate drivers and cryo‑qualified passive components. (Source: © Maurizio Di Paolo Emilio)

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