nfineon Technologies AG is launching its OptiMOS 7 40 V switching-optimized power MOSFET portfolio for AI servers, data centers and telecom infrastructure. Designed for high-frequency DC-DC power conversion, the devices help designers improve efficiency and power density in space-constrained systems.

Pacific Power Source Europe is expanding its standard IPR series with the new Powerblock configurations for AC and AC/DC applications up to 1 MVA. The configurable, modular and scalable power rack systems support unidirectional and regenerative AC/DC power supplies and electronic loads, allowing customers to increase power when needed with minimum effort.

Wolfspeed, Inc. has announced the commercial introduction of its proprietary transparent silicon carbide (TSiC) technology expanding the potential of silicon carbide to enable next-generation augmented reality (AR), quantum computing and advanced optical applications.

Navitas Semiconductor has announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. It has been developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure.

LG Energy Solution today announced that it signed a non-binding memorandum of understanding (MoU) with Energix-Renewable Energies Ltd. to expand the companies’ strategic collaboration on battery energy storage system (BESS) projects in Europe and the U.S.

Two professors from Columbia University and MIT will be recognized for their contributions to semiconductor research. The awards highlight the role of academic research in advancing semiconductor technology and supporting future innovation across the industry.

Infineon Technologies AG is establishing the world’s first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafers in Europe. As part of the project, Infineon will invest around €1.1 billion in its existing cleanroom facilities at the Villach site by 2034. Leveraging both the existing and upgraded infrastructure will enable highly efficient and cost-effective expansion of manufacturing capacity. Production is scheduled to start by the end of 2027.

Vertical Semiconductor, a power semiconductor company, has announced it has signed a letter of intent with the U.S. Department of Commerce’s CHIPS Research and Development Office (CRDO) to receive up to $73 million in federal incentives under the CHIPS and Science Act. The proposed incentives are expected to accelerate research and development of next-generation vertical gallium nitride (GaN) power transistors, unlock domestic production of this technology, and strengthen U.S. leadership in power infrastructure for artificial intelligence (AI) and high-performance computing.

How much can SiC inverters improve drivetrain performance? This white paper draws on customer-site measurements to show how higher efficiency enables more power, reduced cooling requirements and lower system weight.

This paper presents a lifetime prediction methodology for power semiconductor devices, utilizing an Arrhenius-based power cycling lifetime model as well as a temperature-dependent correction of lifetime curves.

This paper presents a neural network-based method for the detection of high impedance faults (HIF), utilizing a Levenberg-Marquardt-trained artificial neural network as well as a realistic two-diode HIF model in MATLAB Simulink.

This paper presents a retrofittable, IoT-based onboard diagnostics device for electric vehicles, utilizing a decision tree algorithm based on FMEA principles as well as real-time multi-source data from motor, controller, and battery.

The Baliga figure of merit (BFOM) is a material metric that quantifies how effectively a power semiconductor minimizes conduction losses. In reality, BFOM is a formula that shows a material’s intrinsic ability to achieve lower conduction losses at high breakdown voltages.This article discusses the Baliga figure of merit and why engineers should consider it before choosing a semiconductor material for any power electronics application.

Gallium nitride (GaN) based power transistors enable higher switching frequencies, higher power density and lower switching losses in power conversion systems. But as they find more use in power supplies, solar inverters, DC-DC converters, lidar and motor drives, one question is key for system designers: how long will a GaN device operate reliably in the real world?

In this article, the author shows how to simulate and stabilize a Vienna rectifier without sensing the high-voltage rail. This so-called predictive control is popular in single-phase power factor correction (PFC) circuits and lends itself well to controlling the power switches of a three-phase PFC. Learn how LTspice simulations associated with SIMPLIS can help closing the loop for a stable operation of the converter.

Silicon-rich lithium-ion batteries promise high energy densities for applications in electric mobility, aerospace, and stationary energy storage. However, their industrial application has so far been limited primarily by their limited cycle life. In the project “StrOboBatt,” researchers at the Fraunhofer Institute for Solar Energy Systems ISE succeeded in operating in-house-manufactured 25-Ah pouch cells with silicon-rich anodes for more than 1,000 full cycles.

Hioki E.E. Corporation has developed a measurement standard that resolves a long-standing accuracy gap in high-frequency power calibration, delivering calibration accuracy approximately ten times greater than was previously achievable — including under methods used by national metrology institutes. By exploiting the physical principle that power losses ultimately manifest as heat, Hioki’s new calorimeter-based system detects heat generation as small as 0.01% of input apparent power, hardly dependent of operating frequency.

Replacing established silicon technology requires more than design alone. It requires proven reliability under real operating conditions. To ensure a new power supply can perform in demanding environments, particularly in medical and industrial systems, hardware must undergo extensive endurance testing before deployment.

Cadence announced an expansion of its collaboration with HPE to accelerate digital twin-driven data center modernization, enabling customers to improve planning, optimization, and lifecycle operations for next-generation AI and high-performance computing (HPC) infrastructure.

Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, has announced that a Renesas subsidiary has completed the acquisition of software developer Pictorus, based in Oakland, California. With the acquisition of Pictorus, Renesas gains a cloud‑based behavioral modeling platform that accelerates embedded system development, moving the engineering experience beyond point tools by providing a connected platform for model-based system design.