onsemi introduced EliteSiC M4, its fourth-generation silicon carbide platform built on a trench architecture, delivering up to 30% higher power density and 35% lower losses compared with the previous generation. By advancing conduction and switching performance, EliteSiC M4 enables more efficient, power-dense systems for AI data centers, electric vehicles and energy infrastructure.

Bourns has announced its Bourns MSF Series Four-Terminal Shunt Power Resistors, including the MSF-2 and MSF-2L models, for accurate current measurement in high-current power systems. The series combines a four-terminal Kelvin measurement design with a 5 W power rating and resistance values from 0.5 mΩ to 5 mΩ. Maximum current is 100 A at 0.5 mΩ, with lower current at higher resistance values to stay within the 5 W rating.

Infineon Technologies AG has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria. Infineon is the first company to pioneer this innovation milestone in a full-scale semiconductor fab environment. It was realized by utilizing existing silicon (Si) manufacturing equipment. Get all details here!

HexaTech, Inc. has announced the immediate production release of its new 100 mm diameter single crystal aluminum nitride (AlN) substrate product. This milestone achievement directly builds on the three-inch diameter substrate launch announced earlier this year.

Electrification, AI, and energy security considerations are set to reshape the power system, as world leaders convene at COP31. A new Hitachi Energy report examines the role of cross-border electricity interconnections in the emerging energy landscape, as strategic infrastructure that can help countries share resources, enhance flexibility, and lower system costs as demand rises and renewable generation expands.

The SEMI Silicon Manufacturers Group (SMG) reported today, in its quarterly analysis of the silicon wafer industry, that worldwide silicon wafer shipments increased 13.4% year-on-year to 3,756 million square inches (MSI) from the 3,313 MSI recorded during the same quarter of 2025.

Greenconn will exhibit at electronica 2026, the world's leading trade fair for electronics, taking place from November 10–13, 2026 at Messe München in Munich, Germany. Visitors to Hall A3, Booth A3.514 will have the opportunity to explore Greenconn's latest connector solutions developed for demanding applications across automotive, industrial automation, robotics, and other high performance industries. The company will present its comprehensive portfolio, ranging from board-to-board and wire-to-board solutions to rugged automotive waterproof connectors.

LG Energy Solution today announced that it signed a non-binding memorandum of understanding (MoU) with Energix-Renewable Energies Ltd. to expand the companies’ strategic collaboration on battery energy storage system (BESS) projects in Europe and the U.S.

How much can SiC inverters improve drivetrain performance? This white paper draws on customer-site measurements to show how higher efficiency enables more power, reduced cooling requirements and lower system weight.

This paper presents a lifetime prediction methodology for power semiconductor devices, utilizing an Arrhenius-based power cycling lifetime model as well as a temperature-dependent correction of lifetime curves.

This paper presents a neural network-based method for the detection of high impedance faults (HIF), utilizing a Levenberg-Marquardt-trained artificial neural network as well as a realistic two-diode HIF model in MATLAB Simulink.

This paper presents a retrofittable, IoT-based onboard diagnostics device for electric vehicles, utilizing a decision tree algorithm based on FMEA principles as well as real-time multi-source data from motor, controller, and battery.

ROHM Semiconductor has announced that its power semiconductor solutions are being utilized in electric vehicle platforms from a automotive manufacturer. In BMW’s “Neue Klasse”, ROHM’s SiC (Silicon Carbide) chips support the efficiency, performance, and reliability of the vehicle's electric powertrain systems.

A good power factor promises high system capacity for industrial sites and equipment reliability for manufacturers. In the beginning, power factors can be either good or poor. A good power factor indicates better utilization of power by the AC system, while a poor power factor indicates power wastage. If the power factor is poor beyond acceptable levels, engineers design and add components or networks to improve it.

The Baliga figure of merit (BFOM) is a material metric that quantifies how effectively a power semiconductor minimizes conduction losses. In reality, BFOM is a formula that shows a material’s intrinsic ability to achieve lower conduction losses at high breakdown voltages.This article discusses the Baliga figure of merit and why engineers should consider it before choosing a semiconductor material for any power electronics application.

Gallium nitride (GaN) based power transistors enable higher switching frequencies, higher power density and lower switching losses in power conversion systems. But as they find more use in power supplies, solar inverters, DC-DC converters, lidar and motor drives, one question is key for system designers: how long will a GaN device operate reliably in the real world?

Hioki E.E. Corporation has developed a measurement standard that resolves a long-standing accuracy gap in high-frequency power calibration, delivering calibration accuracy approximately ten times greater than was previously achievable — including under methods used by national metrology institutes. By exploiting the physical principle that power losses ultimately manifest as heat, Hioki’s new calorimeter-based system detects heat generation as small as 0.01% of input apparent power, hardly dependent of operating frequency.

Replacing established silicon technology requires more than design alone. It requires proven reliability under real operating conditions. To ensure a new power supply can perform in demanding environments, particularly in medical and industrial systems, hardware must undergo extensive endurance testing before deployment.

Cadence announced an expansion of its collaboration with HPE to accelerate digital twin-driven data center modernization, enabling customers to improve planning, optimization, and lifecycle operations for next-generation AI and high-performance computing (HPC) infrastructure.

Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, has announced that a Renesas subsidiary has completed the acquisition of software developer Pictorus, based in Oakland, California. With the acquisition of Pictorus, Renesas gains a cloud‑based behavioral modeling platform that accelerates embedded system development, moving the engineering experience beyond point tools by providing a connected platform for model-based system design.