Wolfspeed, Inc. has announced it has received a conditional loan commitment letter from the U.S. Department of War (“DoW”), through its Office of Strategic Capital (“OSC”), for up to $1.5 billion of long-term financing to support the domestic development and production of silicon carbide (SiC) materials and wide bandgap power devices, with an additional focus on U.S. national security applications.
Wolfspeed has received a conditional commitment for a loan of up to $1.5 billion from the U.S. Department of War to support its domestic wide-bandgap semiconductor supply chain.
Beyond supporting the domestic wide bandgap supply chain, which is critical to the U.S. defense and economic industrial base, the $1.5 billion commitment will advance key DoW initiatives. Specifically, Wolfspeed plans to use the financing to, without limitation, upgrade its gallium nitride (GaN) epitaxy capabilities for next generation communications infrastructure and electronic warfare systems and develop radiation-hardening capabilities for its current SiC and future GaN products.
“SiC and GaN have critical national security applications,” said Robert Feurle, Chief Executive Officer of Wolfspeed. “With this financing, the company would be well positioned to not only continue to serve the DoW but also expand its capabilities for the benefit of U.S. national security as a whole.”
Wolfspeed believes that SiC and related semiconductor technologies are critical to next generation power and radio-frequency applications across defense, aerospace, AI, critical infrastructure and other strategic commercial markets. Building on Wolfspeed’s differentiated silicon carbide technology and intellectual property, and domestic manufacturing footprint in North Carolina, New York and Arkansas, the potential financing is expected to advance a multi-year program to:
Strengthen Wolfspeed’s domestic silicon carbide materials and power-device leadership;
Establish, expand, and/or onshore domestic low-voltage and/or high-voltage GaN power device production capabilities;
Advance GaN-on-SiC radio-frequency epitaxial wafer technology; and
Mr. Feurle continued, “We believe the scale and 30-year tenor of this conditional commitment reflects the long-term importance of the technology and manufacturing capabilities Wolfspeed has built in the United States. This financing would strengthen our continued advancement of silicon carbide materials and wide bandgap power devices, reinforcing our efforts to build a more resilient U.S. semiconductor and defense industrial base.”
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