Research & Development

Conceptual illustration of polar wurtzite niobium aluminum nitride (NbAlN), a transition-metal-containing nitride semiconductor that preserves the crystal structure and polarity of GaN. (Source: Associate Professor Atsushi Kobayashi from Tokyo University of Science, Japan)

Average models allow power designers to simulate DC‑DC converters and three‑phase PFC circuits quickly, analyse small‑signal behaviour and evaluate loop stability without modelling every switching event. (Source: © AI - stock.adobe.com)

Grid-forming inverters are also known as grid-forming resources and grid-forming IBR. This article explains grid-forming inverters in detail. (Bild: © only_kim - stock.adobe.com)

Rising demand for high-end materials shifts production toward higher-margin products, reducing output of standard loss materials. (Source: NCAB)

Hitachi Energy is supporting SF6‑free grid modernization with new EconiQ circuit breaker orders for high‑voltage applications in North America and Europe. (Source: Hitachi Energy)

ThS article explains SiC OBC as a power electronics product: what it delivers, what it falls short of, and why it is a market choice. (Source: © Grispb - stock.adobe.com)

While the electronics industry has focused primarily on semiconductors in recent years, the next critical supply bottleneck has already emerged in the background: PCB base materials are becoming scarce worldwide. (Source: Hürth Elektronik)

As AI racks move to 800 V power delivery, next‑generation hot‑swap controllers provide robust inrush protection and telemetry to enable safe live tray insertion and reliable diagnostics. (Source: © Lasvu - stock.adobe.com)

New battery module with smart cell pressure control from hofer technology. (Source: Hofer Technology)

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