As AI servers require higher power density and efficient PCB space utilization, power device packaging and switching characteristics become increasingly important. This whitepaper examines practical approaches using 600V SJ MOSFETs and TOLL packaging.

This paper presents a highly integrated high power density design of a motor drive, utilizing integrated GaN power stages as well as novel current sensing ICs.

This paper aims to promote the integration of DC Semiconductor Circuit Breakers (SCCBs) into existing DC networks by ensuring reliability through accurate Remaining Useful Life (RUL) predictions.

This work presents a highly-integrated GaN-based monolithic bidirectional switch (MBDS) with blocking voltage beyond 1200 V.