Oxide layers, residues and process variation can undermine bonding, sintering and long-term reliability. Learn how controlled plasma processes create reproducible surface conditions for modern power electronics packaging.

This paper presents a low-complexity digital active gate driver, utilizing only two gate resistances with a single resistance changeover per switching event as well as a novel clock-frequency tuning method for sub-nanosecond timing resolution.

This paper presents the first industrialized 100 A / 800 V Smart Semiconductor Hybrid Circuit Breaker (SCHCB), utilizing a hybrid switching concept combining a high-speed mechanical arcing switch, a bidirectional power semiconductor switch, a robust voltage clamping circuit, and a mechanical isolation contact system.

This paper presents a novel matched-lifetime sequencing methodology for power cycling tests, utilizing an AC power cycling test bench as well as a controlled mixed-stress protocol on 1.2 kV/150 A IGBT modules.