Oxide layers, residues and process variation can undermine bonding, sintering and long-term reliability. Learn how controlled plasma processes create reproducible surface conditions for modern power electronics packaging.

This paper presents a low-complexity digital active gate driver, utilizing only two gate resistances with a single resistance changeover per switching event as well as a novel clock-frequency tuning method for sub-nanosecond timing resolution.

This paper presents the first industrialized 100 A / 800 V Smart Semiconductor Hybrid Circuit Breaker (SCHCB), utilizing a hybrid switching concept combining a high-speed mechanical arcing switch, a bidirectional power semiconductor switch, a robust voltage clamping circuit, and a mechanical isolation contact system.

This paper presents a novel matched-lifetime sequencing methodology for power cycling tests, utilizing an AC power cycling test bench as well as a controlled mixed-stress protocol on 1.2 kV/150 A IGBT modules.

This paper presents a novel optimization methodology for shared DC-link (SDCL) architectures in paralleled inverters, utilizing phase-shifted carrier PWM as well as a fast MATLAB-based current reconstruction method.

This paper presents a novel and fully bidirectional test concept for active short-circuit (ASC) characterization, utilizing two high-current-rated IGBTs operated in the active region as well as flexible gate-voltage-based current control.

As AI servers require higher power density and efficient PCB space utilization, power device packaging and switching characteristics become increasingly important. This whitepaper examines practical approaches using 600V SJ MOSFETs and TOLL packaging.

This paper presents a highly integrated high power density design of a motor drive, utilizing integrated GaN power stages as well as novel current sensing ICs.

This paper aims to promote the integration of DC Semiconductor Circuit Breakers (SCCBs) into existing DC networks by ensuring reliability through accurate Remaining Useful Life (RUL) predictions.

This work presents a highly-integrated GaN-based monolithic bidirectional switch (MBDS) with blocking voltage beyond 1200 V.

This paper proposes a new gate driver that always achieves the fastest switching while keeping the surge voltage below the breakdown voltage.

This paper proposes using semiconductive materials in the manufacturing of the medium voltage (MV) coil former for medium-frequency transformers.

Metal oxidation challenges electronics manufacturing. Plasmatreat’s REDOX®-Tool delivers a reliable, eco-friendly inline solution for oxide removal, ensuring top-quality products for high-performance demands.

At the PCIM Europe Conference 2024, Adriana Campos from the SuperGrid Institute, France, was honored with the Young Engineer Award.

At the PCIM Europe Conference 2024, Andreas Horat, Power Electronic Systems Laboratory, ETH Zurich, was honored with the Young Researcher Award.

This paper compares the novel sensor gap transmission line pulsing (sgTLP) technique with the established method of double-pulse testing (DPT) for characterizing parasitic inductances in a fast SiC half-bridge power module.

This study will show modified insulation materials to increase the robustness of IGBT-modules against H₂S-driven failure mechanisms.

This paper introduces a partial-load Triangular Current Mode (TCM) modulation concept for high efficiency traction drive applications without compromising peak performance.

This application note discusses the use of programmable sources and loads in boosting the development of microinverters and electric vehicle (EV) projects in the context of renewable energy.

Tektronix dives into the most common methodology for dynamic characterization of wide bandgap switching devices and discuss best practices and setup to determine accurately all switching parameters.

Choosing the optimum programmable AC source or DC supply for your application extends well beyond choosing AC or DC and a voltage, current, and frequency rating.