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:quality(80)/p7i.vogel.de/wcms/8c/c3/8cc3f77472b8af8ca61b5bf8cb7ee8f0/0131704631v2.jpeg "ROHM launches New Top-Side Cooling Package for SiC MOSFETs, Combining High Heat Dissipation with High Voltage Support (Source: ROHM)")
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:quality(80)/p7i.vogel.de/wcms/5c/f5/5cf53b6db2706b86ac6eb5c407704d27/0131699647v2.jpeg "This article explains inductors in electrical and electronics engineering. (Source: © Iurii - stock.adobe.com)")
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:quality(80)/p7i.vogel.de/wcms/8c/c3/8cc3f77472b8af8ca61b5bf8cb7ee8f0/0131704631v2.jpeg?v= "ROHM launches New Top-Side Cooling Package for SiC MOSFETs, Combining High Heat Dissipation with High Voltage Support (Source: ROHM)")
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:quality(80)/p7i.vogel.de/wcms/6c/98/6c9836d116a84227aba27476f0b49690/0131639213v2.jpeg?v= "Looking ahead to continued growth in the AI server and data center markets, ROHM will further strengthen the development and supply of power devices using SiC, GaN, and silicon. (Source: © mevideo - stock.adobe.com)")
Article | Jun 3, 2026
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
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ROHM’s New 1200V IGBTs Achieve Industry-Leading Low Loss Characteristics with High Short-Circuit Tolerance
:quality(80)/p7i.vogel.de/companies/6a/20/6a201319b071c/650v-gan-toll-package-eu.jpeg?v= "650v-gan-toll-package-eu (ROHM Semiconductor)")
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GaN and SiP
:quality(80)/p7i.vogel.de/companies/6a/20/6a20140987066/sic-trcdrive-pack.jpeg?v= "sic-trcdrive-pack (ROHM Semiconductor)")
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ROHM's TRCDRIVE PACK™ for significantly smaller xEV inverters
:quality(80)/p7i.vogel.de/companies/6a/22/6a226617140d5/screenshot-2026-06-05-074339.png?v= "screenshot-2026-06-05-074339 (ROHM Semiconductor)")
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ROHM's TRCDRIVE PACK™ for significantly smaller xEV inverters
:quality(80)/p7i.vogel.de/companies/6a/22/6a226aed98760/sic-sct4013dll.jpeg?v= "sic-sct4013dll ()")
News | Jun 1, 2026
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
:quality(80)/p7i.vogel.de/wcms/93/00/930039fb8c34dcec1448cd8b2c19d9ba/0131245485v2.jpeg?v= "ROHM’s 5th‑generation EcoSiC MOSFETs deliver ~30% lower on‑resistance at high temperatures, enabling smaller, higher‑power inverters for xEVs and industrial power supplies. (Source: ROHM)")
Article | May 18, 2026
Rohm develops 5th Generation SiC MOSFETs with approx. 30% lower on-resistance at high temperatures
:quality(80)/p7i.vogel.de/wcms/15/ac/15ac0b12b7efcf6aee296745d4686d51/0130461814v2.jpeg?v= "SiC devices are key enablers for higher efficiency and power density in modern electric vehicle systems. (Source: ROHM)")
Article | Mar 31, 2026
ROHM has introduced reference designs for three-phase inverters featuring new SiC power modules
:quality(80)/p7i.vogel.de/wcms/54/dd/54ddf7a96338d30ee2ee7d2d773eed09/0127529567v2.jpeg?v= "ROHM's innovative diode offers superior protection for image sensors by balancing low VF and IR effectively.
(Source: ROHM)")