SILICON CARBIDE Resonac successfully develops 300 mm SiC single-crystal substrates

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Resonac Corporationhas successfully grown and processed 300 mm (12-inch) silicon carbide (SiC) single crystals, a next-generation electronics material. The 300 mm (12-inch) diameter represents one of the world’s largest SiC substrate sizes currently under development and marks an important technological milestone toward the large-diameter and high-quality advancement of SiC substrates and SiC epitaxial wafers.

Resonac has developed 300 mm SiC single-crystal substrates, advancing larger-diameter wafer technology for next-generation power electronics and other high-performance semiconductor applications.(Source: ©  Resonac)
Resonac has developed 300 mm SiC single-crystal substrates, advancing larger-diameter wafer technology for next-generation power electronics and other high-performance semiconductor applications.
(Source: © Resonac)

SiC is attracting attention as a material for power semiconductors due to its lower power-conversion losses and reduced heat generation compared with conventional silicon‑based power devices, contributing to improved energy efficiency. Demand is expanding particularly in electric vehicles (EVs) and renewable energy applications, and adoption is also increasing in areas requiring high efficiency, such as power supplies for data centers. Against this backdrop of market growth, Resonac currently supplies mainly 150 mm (6‑inch) SiC epitaxial wafers—the market mainstream—and has also begun shipments of 200 mm (8‑inch) SiC epitaxial wafers.

In addition, single‑crystal SiC materials, which exhibit high thermal conductivity, are drawing attention for potential use as heat‑spreading substrates and advanced packaging substrates for semiconductors used in AI servers and high‑performance computing (HPC). Their high refractive index also makes them a promising candidate for applications such as AR smart glasses.

This achievement forms part of Resonac’s ongoing efforts to advance the large‑diameter and high‑quality development of SiC substrates, leveraging the company’s long‑standing expertise in SiC single‑crystal growth and substrate processing, as well as outcomes from the Green Innovation Fund Program.

Guided by its commitment to being “Best‑in‑Class,” Resonac will continue to pursue technological innovation in SiC single‑crystal substrates and epitaxial wafers. Through the provision of high‑performance, high‑reliability SiC materials, the company aims to contribute to the evolution of the power electronics market and the realization of a more sustainable society.

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