Research & Development

Researchers from EPC, The University of Hong Kong and Virginia Tech demonstrated a fully integrated GaN boost converter operating entirely at 4 K, achieving 91.6% efficiency at 7.6 W by combining monolithic GaN power ICs, on‑chip gate drivers and cryo‑qualified passive components. (Source: © Maurizio Di Paolo Emilio)

Energy harvesting removes the need for periodic battery swaps in hard‑to‑reach sensors — economically and regulatorily attractive as EU battery rules raise compliance and lifecycle costs. (Source: © Plaifah - stock.adobe.com)

At The Smarter E 2026 Huawei launched LUTERRA, its next‑generation grid‑forming ESS platform, and showcased the award‑winning SUN2000‑506KTL 506 kW smart string inverter — technologies aimed at 1000 Vac architectures and plant‑level grid‑forming functionality. (Source: © Thares2020 - stock.adobe.com)

Aluminum nitride crystal with a diameter of 2 inches – grown in the Joint Lab of Fraunhofer IISB and PVA TePla. (Source: Jennifer Reißig / Fraunhofer IISB)

Allegro’s new safety PMIC integrates a wheel‑speed sensor interface and automotive‑grade power management to simplify ABS/ESC sensor nodes while supporting functional‑safety requirements. (Source: © lil - stock.adobe.com)

Onsemi advances its fab‑right strategy by agreeing to divest two manufacturing facilities, refocusing capacity and resources to align with long‑term strategic priorities. (Source: Onsemi)

Comprehensive laboratory testing regimens—combining thermal cycling, high‑current stress, EMC, and accelerated lifetime tests—are essential to validate advanced power designs and ensure reliability in real‑world applications. (Source: PRBX)

Fragile semiconductor supply chains — from concentrated fabs and toolmakers to constrained raw‑material suppliers — risk delaying renewable deployments and slowing the energy transition unless resilience measures are adopted. (Source: © Fotografos - stock.adobe.com)

Materials and integration are reshaping energy harvesting — from GaN/SiC at the high‑power edge to SOI and low‑leakage CMOS for nanoamp quiescent current in battery‑free sensors. (Source: © Plaifah - stock.adobe.com)

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