This paper presents experimental results on the impact of current density on wire bond lifetime and introduces a novel power cycling test method that allows for testing with moderate currents.

This paper will give you an overview on materials to increase reliability through better heat dissipation, thermal management as well as insulation.

This paper looks at the benefits of tandem diodes in sixpack and PIM topologies. The smart pairing of diodes with lower dynamic loss coefficients provides a cost effective alternative to WBG devices.

Heavy-duty vehicles contribute about 25% of traffic emissions. To electrify them, batteries of e.g., urban buses need to be loaded fast without interrupting the operation – demanding highly efficient, reliable electric subsystems.

MVDC grids are increasingly present in the existing AC systems regarding integration of renewable energy resources. This creates the need to master the design of medium-frequency transformers, one of the key components of modern DC transformers.

Ceramic substrate materials and adapted thick-film pastes and inks can make a significant contribution to realizing future 6G and millimeter wave radar applications. Read our latest white paper for more information.

Layout optimization of power electronic switching cells is important for the design of high-efficiency fast-switching power converters. Using the developed virtual prototype, the layout design is optimized to achieve lower switching losses.

The VCE(T)-method condenses the real temperature distribution of active devices to a single virtual temperature value. This paper reveals which information are lost due to averaging and how they should be considered for measurement interpretation.

The modern power grid requires PE-interfaced assets to provide ancillary services. This withepaper explains how UPS systems can be made ready to participate in reserve markets and create revenues for the asset owner.

This paper demonstrates how the inherent advantages of GaN power devices can faciliate the design of systems with power densities far beyond state-of-the-art Silicon systems. This is shown for 240W USB-C chargers and 3-phase 11kW on-board chargers.

Challenging power integrity measurements can be performed quickly and accurately with this helpful guide.

Without semiconductors, the world would be a very different place; we would have no electronic hand calculators, microwave ovens, digital alarm clocks, cellphones, personal computers, electronically controlled transmissions, or washing machines.

This paper will give you an overview on materials to increase reliability through better heat dissipation, thermal management as well as insulation.

Discrete power rectifiers used in asynchronous switch mode power supplies play a decisive role in the efficiency and reliability of the complete system. Discover how Trench Schottky rectifiers combine low switching losses and high thermal performance

This paper looks at various cooling scenarios including both serial and parallel configurations and multiple cooling structures with the goal of improving the current rating and reliability of a power semiconductor module for e-mobility applications.

The demand having a snubber circuit in the power supply topology leads to specific verification methods during the design to obtain a proper and reliable design. Learn how in this AppNote.

A known problem for electronic developers: No matter what they develop, nothing works without current and voltage. Learn how to create a customized and reliable power supply in just 5 steps and what tools are available.

The reverse recovery of SiC MOSFET body diodes differs du to its unique characteristics from that of Si pn-diodes. The output capacitance and the commutation stray inductance play a significant role in fast switching circuits.

The research deals with power cycling reliability of power electronic devices under application close conditions. An advanced testing approach is presented. The results are underlined by 3D-simulations, which allow a proper physical understanding.

Highly reliable interconnect technologies are increasingly used to achieve much higher reliability or enable the device to operate at elevated temperature. These benefits, however, evolve new challenges for the qualification process.

This paper presents a novel current source gate driver for SiC MOSFETs with adaptive functionalities that aims to improve controllability of turn-on/off delays, di/dt and dv/dt compared to conventional totem-pole voltage source gate drivers.