Diotec Semiconductor AG

Reducing Complexity in High-Power Circuit Designs

High-power applications such as brushless DC (BLDC) motor drives have traditionally had to rely on multiple silicon MOSFETs connected in parallel to achieve the required current capability.

This approach may be effective, but it introduces additional design challenges, including synchronized gate switching, balanced current sharing, symmetrical PCB layouts, and the management of parasitic inductances. These factors can lead to increased circuit complexity and bigger thermal management requirements.

With the DIW120SIC028, Diotec Semiconductors uses advanced SiC technology with its high current capability and low on-state resistance. This offers a single-device solution in applications that previously required multiple silicon MOSFETs, depending on the operating conditions and thermal design.

This approach can simplify PCB layouts, reduce component count, and minimize the challenges associated with paralleling semiconductor devices.

Versatile Solution for Power Conversion and Motor Control

The DIW120SIC028 is suitable for a wide range of demanding power electronics applications, including BLDC motor drives, electric vehicle charging systems, solar inverters, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.

Its SiC technology supports efficient high-voltage switching, while the low RDS(on) helps to reduce conduction losses. The TO-247-3L package streamlines its integration into established power electronics designs.

As a semiconductor producer, Diotec Semiconductor provides engineers and technical buyers with application-oriented solutions for modern power electronics. The DIW120SIC028 combines 1200 V voltage capability, 28 mΩ maximum on-state resistance, and 300 A peak drain current to support efficient, reliable, and potentially less complex high-power circuit designs.