HexaTech releases 100 mm diameter AIN substrate product

SEMICONDUCTORS HexaTech releases 100 mm diameter AIN substrate product

2026-11-05 From HexaTech 1 min Reading Time

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HexaTech, Inc. has announced the immediate production release of its new 100 mm diameter single crystal aluminum nitride (AlN) substrate product. This milestone achievement directly builds on the three-inch diameter substrate launch announced earlier this year.

HexaTech is developing low-defect-density 100 mm aluminum nitride substrates for high-voltage and high-frequency semiconductor devices.(Source: © ultramcu - stock.adobe.com) — HexaTech is developing low-defect-density 100 mm aluminum nitride substrates for high-voltage and high-frequency semiconductor devices.
(Source: © ultramcu - stock.adobe.com)

HexaTech CEO John Goehrke noted, “This tremendous accomplishment is the result of a focused development program, supported over the previous 20 years by both public and private investment, and the outstanding HexaTech team. This success will be the basis of our future expansion efforts, as we drive toward 150 mm and beyond, and close the gap with other high-performance wide bandgap materials.”

“HexaTech’s established history of delivering AlN substrate material with market-leading structural and surface quality continues with this significant technical achievement,” added HexaTech Manager of Research and Development, Dr. Rafael Dalmau.

Gregory Mills, HexaTech VP of Business Development emphasized, “This 100 mm product launch directly addresses the needs of our commercial optoelectronic and high-power radio frequency (RF) customers, by once again lowering the price per unit area threshold, allowing for ease of fabrication line insertion, and rapid scaling of device production.“

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