Most read articles
BASIC KNOWLEDGE - Ohm's law
The meaning of Ohm’s law: Fundamentals at a glance
SEMICONDUCTOR HISTORY
The story of Silicon Valley – How it began, how it boomed, and where it’s headed
POWER BY MAURIZIO
Quantum weirdness, real watts: The physics connecting electrons and power
SIC VS GAN
SiC vs GaN in 2026 and beyond
CONNECTORS, PRESS-FIT ZONE, PCB
HYBRO+ metal composite stops rising bronze prices
POWER PROTECTION
Toshiba launches 1100 TP series modular UPS for three-phase power protection
CIRCUIT PROTECTION
Littelfuse launches ultra-low-capacitance tvs diode arrays
GAN FET
Renesas expands GaN portfolio with first low-voltage GaN FETs
Galleries
SUPPLY CHAIN
Wolfspeed receives conditional $1.5b loan commitment
CONNECTORS, PRESS-FIT ZONE, PCB
HYBRO+ metal composite stops rising bronze prices
SEMICONDUCTORS
SEMI joins the EU STEAM executive panel to advance semiconductor workforce priorities
AI DATA CENTER
Infineon completes acquisition of C2i Semiconductors
New Possibilities for Production of Power Electronics
How to Improve Surface Quality for Bonding Various Materials
Oxide layers, residues and process variation can undermine bonding, sintering and long-term reliability. Learn how controlled plasma processes create reproducible surface conditions for modern power electronics packaging.
PCIM 2026 - YOUNG RESEARCHER AWARD
Novel Test Concept for Active Short-Circuit Characterization
This paper presents a novel and fully bidirectional test concept for active short-circuit (ASC) characterization, utilizing two high-current-rated IGBTs operated in the active region as well as flexible gate-voltage-based current control.
PCIM 2026 - BEST PAPER AWARD
Low-Complexity Sub-Nanosecond Digital Active Gate Driving for IV-Trajectory Control in SiC Modules
This paper presents a low-complexity digital active gate driver, utilizing only two gate resistances with a single resistance changeover per switching event as well as a novel clock-frequency tuning method for sub-nanosecond timing resolution.
PCIM 2026 - BEST PAPER AWARD
Lifetime of IGBTs Under Mixed Sequential Power Cycling: A Matched-Lifetime Sequencing Experiment
This paper presents a novel matched-lifetime sequencing methodology for power cycling tests, utilizing an AC power cycling test bench as well as a controlled mixed-stress protocol on 1.2 kV/150 A IGBT modules.
wts // electronic components GmbH
Professional Resistor
ICT SUEDWERK GmbH
More Products
Diotec Semiconductor AG
Meeting Tomorrow’s Energy-Efficiency Requirements: The MOSFET DID3A2N65 Matters
HVP High Voltage Products GmbH
SPS Series - High Voltage Power Supply
MEASUREMENT TOOLS
Hioki achieves tenfold advance in high-frequency power calibration
POWER TESTING
Laboratory testing regimens for advanced power design
DATA CENTER
Cadence accelerates digital twin–driven data center AI modernization with HPE