Diotec Semiconductor AG

In a traditional three-pin package, the source terminal carries both the power current and the return path for the gate driver. During fast switching events, the high di/dt of the load current generates a voltage drop across the parasitic inductance of the shared source connection. This voltage opposes the gate driver's control signal, effectively slowing the switching process and increasing switching losses.

A Kelvin source connection addresses this challenge by providing a dedicated source terminal exclusively for the gate driver. By separating the gate drive return path from the high-current load path, the influence of parasitic source inductance is significantly reduced. The result is improved switching performance, more accurate gate control, and higher overall system efficiency, particularly in high-power and high-frequency applications.

The Kelvin source contact could also reduce the overall package intrinsic inductance which if not supressed could potentially increase the stress on the SiC MOSFET.

To support these demanding applications, Diotec has introduced the DIF170SIC049, a 1700 V silicon carbide (SiC) MOSFET featuring a maximum on-resistance of just 49 mΩ. Housed in a TO-247-4L package with an integrated Kelvin source pin, the device enables designers to fully benefit from the fast switching capabilities of SiC technology while minimizing package-induced switching losses.

The DIF170SIC049 is designed for applications such as industrial inverters, renewable energy systems, energy storage, EV charging infrastructure, and other high-voltage power conversion systems where efficiency and switching performance are critical design parameters.

The device is now available in volume production, providing engineers and system designers with a robust solution for next-generation high-power converter designs.