INDUSTRIAL EQUIPMENT Toshiba Launches 100V N-Channel Power MOSFET

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Toshiba Electronic Devices & Storage Corporation has launched “TPH2R70AR5,” a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba’s latest-generation process¹⁾. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in data centers and communications base stations.

The 100V U-MOS11-H series improves on the drain-source On-resistance (R_DS(ON)), total gate charge (Q_g) and the trade-off between them (R_DS(ON)×Q_g) delivered by Toshiba’s existing generation process, the U-MOSX-H series, reducing both conduction and switching power losses.

TPH2R70AR5 offers approximately 8% lower R_DS(ON) and 37% lower Q_g against TPH3R10AQM, a U-MOSX-H series product, plus a 42% improvement in R_DS(ON)×Q_g. It also achieves high-speed body diode performance through the application of lifetime control technology²⁾, which reduces reverse recovery charge (Q_rr) and suppresses spike voltage. Q_rr is improved by approximately 38% and the R_DS(ON)×Q_rr is also improved by approximately 43%. These industry-leading³⁾ trade-off characteristics⁴⁾, both R_DS(ON)×Qg and R_DS(ON)×Q_rr, minimize power loss, contributing to higher efficiency and power density in power supply systems. It also adopts the SOP Advance(N) package and offers excellent mounting compatibility with industry standards.

Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time; and highly accurate G2 SPICE model that accurately reproduces transient characteristics. All are now available.

Toshiba will continue to expand its lineup of low-loss MOSFETs that enable more efficient power supplies and contribute to lower equipment power consumption.

Notes:

1) As of September 2025, among Toshiba’s process technologies for low-voltage power MOSFETs. Toshiba survey.

2) Lifetime control technology: Intentionally shortening the carrier lifetime by using an ion beam to introduce defects into the semiconductor enhances switching speed, which improves the recovery speed of the diode and reduces noise.

3) As of September 2025, comparison with other 100V N-channel power MOSFETs for industrial equipment. Toshiba survey.

4) RDS(ON)×Qg,: 120mΩ・nC (typ), RDS(ON)×Qrr: 127mΩ・nC (typ)

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