Toshiba unveils compact 650V SiC MOSFETs for enhanced industrial efficiency

SIC MOSFET Toshiba unveils compact 650V SiC MOSFETs for enhanced industrial efficiency

2025-05-27 From Toshiba Electronic Devices & Storage Corporation 2 min Reading Time

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Toshiba Electronic Devices & Storage Corporation has launched four 650V silicon carbide MOSFETs, equipped with its latest¹ 3rd generation SiC MOSFET chips and housed in a compact DFN8×8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, TW031V65C, TW054V65C, TW092V65C and TW123V65C have already started.

Toshiba has launched four 650V 3rd generation SiC MOSFETs in a compact DFN8×8 package, enhancing efficiency and power density for industrial applications.(Source: Toshiba Electronic Devices & Storage Corporation) — Toshiba has launched four 650V 3rd generation SiC MOSFETs in a compact DFN8×8 package, enhancing efficiency and power density for industrial applications.
(Source: Toshiba Electronic Devices & Storage Corporation)

The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8×8 package, which reduces volume by more than 90 % compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance² components smaller than those of lead-inserted packages, reducing switching losses. DFN8×8 is a 4-pin³ package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55 % and turn-off loss by approximately 25 %⁴ compared to current Toshiba products⁵, helping to reduce power loss in equipment.

Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.

Figure 1. Comparison of turn-on loss (Eon) and turn-off loss (Eoff) between TO-247 and DFN8×8 package.(Source: Toshiba Electronic Devices & Storage Corporation) — Figure 1. Comparison of turn-on loss (Eon) and turn-off loss (Eoff) between TO-247 and DFN8×8 package.
(Source: Toshiba Electronic Devices & Storage Corporation)

Applications

These SiC MOSFETs are ideal for applications like power supplies, EV chargers, and photovoltaic inverters, boosting energy efficiency.

Switched mode power supplies in servers, data centers, communications equipment, etc.

EV charging stations

Photovoltaic inverters

Uninterruptible power supplies

Features

Featuring a compact DFN8×8 package, these MOSFETs enhance miniaturization and offer low switching losses.

DFN8×8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss.

Toshiba’s 3rd generation SiC MOSFETs

Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio

Low drain-source On-resistance×gate-drain charges

Low diode forward voltage: V_DSF=-1.35V(typ.) (V_GS=-5V)

Main Specifications

The main specifications, detailed in the following table, illustrate the devices' performance characteristics, unless otherwise specified, T_a=25°C

Part number				TW031V65C	TW054V65C	TW092V65C	TW123V65C
Package	Name			DFN8×8
Package	Size (mm)		Typ.	8.0×8.0×0.85
Absolute maximum ratings	Drain-source voltage V_DSS(V)			650
	Gate-source voltage V_GSS(V)			-10 to 25
	Drain current (DC) I_D(A)	T_c=25°C		53	36	27	18
Electrical character -istics	Drain-Source On-resistance R_DS(ON) (mΩ)	V_GS=18V	Typ.	31	54	92	123
	Gate threshold voltage V_th(V)	V_DS=10V		3.0 to 5.0
	Total gate charge Q_g (nC)	V_GS=18V	Typ.	65	41	28	21
	Gate-drain charge Q_gd(nC)	V_GS=18V	Typ.	10	6.2	3.9	2.3
	Input capacitance C_iss(pF)	V_DS=400V	Typ.	2288	1362	873	600
	Diode forward voltage V_DSF(V)	V_GS=-5V	Typ.	-1.35

Notes

¹ As of May 2025.

² Resistance, inductance, etc.

³ A product with a signal-source pin connected close to the FET chip.

⁴ As of May 2025, values measured by Toshiba. Please refer to Figure 1.

⁵ A 650V 3rd generation SiC MOSFET with equivalent voltage and On-resistance that uses the TO-247 package without Kelvin connection.

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SIC MOSFET Toshiba unveils compact 650V SiC MOSFETs for enhanced industrial efficiency

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