POWER SEMICONDUCTOR Hitachi Energy and Pakal develop new silicon power semiconductor for high-voltage modules

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Hitachi Energy and Pakal Technologies have announced a collaboration focused on the development and integration of a new silicon power semiconductor technology. Hitachi Energy will incorporate Pakal Technologies’ Insulated Gate Turn-Off (Thyristor), IGTO(t), silicon power switch into its portfolio of high-voltage power modules. The devices are intended for applications including rail systems, renewable energy, energy storage, and data center infrastructure.

Semiconductors are essential to almost every critical system, forming the backbone of a stable, modern grid. The collaboration addresses one of the most significant challenges in large-scale electrification: reducing energy losses and improving overall efficiency in high-voltage power conversion. By combining Hitachi Energy’s expertise in power module design with Pakal Technologies’ IGTO(t) innovation – which delivers 30 percent lower losses compared to today’s widely used devices – the collaboration aims to contribute to cumulative daily efficiency gains across energy infrastructure. Together, the companies intend to produce the highest-performing ≥3.3 kV power semiconductor modules for Hitachi Energy to offer to its large and growing global customer base, delivering higher performance, lower operating costs, and greater long-term reliability across critical electrification projects.

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“With a century-long legacy of in-house semiconductor manufacturing expertise and ongoing expansion, Hitachi Energy is committed to advancing innovation in power electronics. We are pleased to join forces with Pakal Technologies to incorporate its novel IGTO(t) within our semiconductor portfolio. This collaboration represents, over time, an opportunity to strengthen the global energy ecosystem at its core," comments Niklas Persson, Managing Director at Hitachi Energy.

“Pakal Technologies was founded to make power conversion simpler, better, and more efficient. Collaborating with Hitachi Energy is an honor and secures a long-term partner capable of scaling impact with us. Having our IGTO(t) platform recognized by a company with Hitachi Energy’s exceptional history for quality, reliability, and performance in the energy landscape ensures we can contribute to today’s sprint toward the electrification era," adds Ben Quinones, CEO of Pakal Technologies.

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The IGTO(t) represents the first new high-voltage silicon power semiconductor since the insulated gate bipolar transistor (IGBT) was introduced in the 1980s. The IGTO(t) delivers 30 percent lower conduction losses at high current and temperature than IGBT, while maintaining compatibility with existing module architectures. At the system level, these performance advances enable higher power density, reduced thermal and cooling requirements, and materially improved energy efficiency.