Jul 10, 2026
SIT10C065 + SIT12C065 - 10 A / 12 A - 650 V Silicon Carbide Schottky in TO-220AC
High frequency diodes with almost zero switching losses for Power Factor Correction and high efficient inverter stages.
The SIT10C065 and SIT12C065 by Diotec Semiconductor are two neighboured members of the 650 V single diode family in TO-220AC. They offer 10 A respectively 12 A of average forward current. Both are ideally suited for high voltage / high frequency switching circuits, such as Power Factor Correction (PFC), high efficient solar inverters or data server power supplies.
Both device feature a high reverse voltage of 650 V combined with an extremely low "reverse recovery" better say capacitive charge and thus discharging time. That makes it ideally suited for all applications, where high voltage levels are switched at very high frequencies.
In that case, switching losses are dominant; which calls for high efficient Schottky rectifiers. Silicon based types can be done up to about 200 V; this limitation can be nowadays overcome by using Silicon Carbide wafer material.
Features:
High reverse voltage
Almost zero switching losses
Low reverse leakage current
High efficiency high frequency switching
Single diodes in industry standard case outline
Applications:
Solar inverters
Data server power supplies
Power Factor Correction (PFC)
Specifications:
10 A respectively 12 A average forward current (IFAV)
650 V repetitive reverse voltage (VRRM)
Typical forward voltage 1.7 V at 10 A and 175°C (VF)
Typical forward voltage 1.75 V at 12 A and 175°C (VF)
Typical reverse leakage 20 µA at 650 V and 175°C (IR)
Total capacitive charge 28 nC at 400 V, 10 A, 200 A/µs [QC)
TO-220AC case outline