Infineon launches CoolGaN G3 transistors for high-power applications

GALLIUM NITRIDE Infineon launches CoolGaN G3 transistors for high-power applications

2025-02-18 From Infineon Technologies AG 1 min Reading Time

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Gallium Nitride technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, Gallium Nitride suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers.

Infineon's new CoolGaN G3 transistors in industry-standard RQFN packages address the challenge of GaN package fragmentation, offering easier design, faster time-to-market, and high performance in a familiar footprint. Find out more here.(Source: Denis - stock.adobe.com) — Infineon's new CoolGaN G3 transistors in industry-standard RQFN packages address the challenge of GaN package fragmentation, offering easier design, faster time-to-market, and high performance in a familiar footprint. Find out more here.
(Source: Denis - stock.adobe.com)

Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100 V in RQFN 5x6 package (IGD015S10S1) and 80 V in RQFN 3.3x3.3 package (IGE033S08S1).

CoolGaN G3 Transistor in new Silicon-footprint packages offer a footprint that allows for easy multi-sourcing strategies.(Source: Infineon Technologies AG) — CoolGaN G3 Transistor in new Silicon-footprint packages offer a footprint that allows for easy multi-sourcing strategies.
(Source: Infineon Technologies AG)

“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardized footprint, easier handling and faster-time-to-market,” said, Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.

The CoolGaN G3 100 V Transistor devices will be available in a 5x6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high performance transistor output in a familiar footprint.

Moreover, this chip and package combination allows for high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density.

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