EPC space introduces advanced 300 V rad-hard GaN FET for space applications

GALLIUM NITRIDE EPC space introduces advanced 300 V rad-hard GaN FET for space applications

2025-06-30 From Efficient Power Conversion Corporation 1 min Reading Time

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EPC Space, a global player in radiation-hardened gallium nitride power devices, announces the launch of the EPC7030MSH, a radiation-hardened 300 V gallium nitride FET that delivers unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.

Discover EPC Space's EPC7030MSH, a breakthrough 300 V rad-hard GaN FET, elevating satellite power system efficiency. Image for illustrative purposes only.(Source: © keshia - stock.adobe.com) — Discover EPC Space's EPC7030MSH, a breakthrough 300 V rad-hard GaN FET, elevating satellite power system efficiency. Image for illustrative purposes only.
(Source: © keshia - stock.adobe.com)

As satellite platforms require higher voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH addresses a critical need for efficient, compact, and robust front-end power conversion.

With the lowest R_DS(on) and gate charge in its class, the EPC7030MSH delivers the highest power current rating among all 300 V rad-hard GaN FETs currently on the market. This makes it ideal for front-end DC-DC converters that must operate under stringent thermal and radiation constraints.

“The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers,” said Bel Lazar, CEO of EPC Space.

PCIM Best Paper Awards Winner_Matthias Kasper

Key features:

Rated for 300 V operation at LET = 63 MeV, and 250 V at LET = 84.6 MeV

Lowest R_DS(on) and Q_G of any 300 V rad-hard GaN FET

Highest current rating in its voltage class

FSMD-M hermetic surface-mount package optimized for conduction cooling and increased creepage distance

Compatible with existing GaN gate drivers

Target applications:

Front-end DC-DC converters in satellite power systems

Power conversion for higher voltage distribution buses

Electric propulsion platforms requiring compact, high-performance switching

The EPC7030MSH is part of EPC Space’s ongoing mission to deliver space-grade Radiation Hardened GaN solutions that outperform silicon Radiation Hardened MOSFETs in efficiency, size, and thermal management—enabling more capable, reliable, and scalable satellite systems.

For 500-unit quantities engineering models are priced at 236 USD, and Rad Hard space qualified are priced at 349 USD.

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