COMPARISON Battle of SiC vs GaN power modules

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ROHM Semiconductor GmbH

CISSOID S.A.

MERSEN

Silicon carbide and gallium nitride have remained a trending topic in the industry for about a decade. Experts try to prove one is better than the other, much like a rap battle. One thing is certain: the wideband gap duo has beaten silicon. It is only because silicon is not a true power semiconductor, but SiC and GaN are. The article compares SiC and GaN power modules and pinpoints where each wins.

The power electronics specialist Semikron Danfoss writes that SiC is older than our solar system. SiC has a wide bandgap energy of 3.3 eV. SiC power modules contain SiC semiconductor-based diodes, Schottky diodes, or MOSFETs. Due to exceptional thermal conductivity, SiC modules perform better in higher operating temperatures. SiC has a lower R(On) for a given die area, leading to lower losses and higher overall efficiency.

From a fabrication perspective, SiC manufacturing is costly but offers flexibility in design and compatibility with existing systems and infrastructure. The semiconductor industry has been manufacturing SiC through planar and trench technologies. The SiC packaging ecosystem is mature and standardized. SiC modules function as the base for electrification in various power electronics and renewable energy-based applications. Some SiC power module applications are listed below.

• EV chargers.

• E-mobility.

• Railway traction systems.

• Industrial motor drivers.

• Solar inverters.

• Power supplies like UPS and SMPS.

• Medical equipment.

• Data centers.

Research & Development

Is gallium nitride (GaN) the silicon of the future?

GaN power module

GaN has a wide band gap energy of 3.4 eV. Texas Instruments claims that GaN results in 80 % lower losses than silicon. Most GaN modules contain HEMT. The exceptional feature that sets GaN apart from others is its high power density. In simple words, high power density translates to a smaller size for the same amount of power and less heat generation compared to silicon.

From a manufacturing perspective, GaN-on-Si benefits from silicon fabs. TSMC, a leading Taiwan-based contract semiconductor manufacturer, recently announced that they have shut down its GaN foundry business. The reasons for such problems in manufacturing are complicated design and competition from Chinese manufacturers. Nevertheless, TSMC is a single company. Many other companies invest in GaN module manufacturing. Some applications of GaN power modules are listed below.

• Historically, GaN has been popular as an RF amplifier, comparable to LDMOS. Applications include radar and wireless infrastructure.

• Consumer electronics - GaN chargers and adapters.

• EV onboard chargers

• Industrial equipment, HVAC, and motor control.

• PSU in data centers.

SiC vs GaN power module: Who is the winner?

In our SiC MOSFET vs GaN HEMT article, we have extensively covered similarities and differences between them. This article compares SiC and GaN as power modules, based on their applications and market.

E-BOOK

Semiconductors: A Comprehensive Guide

Winner of high power: SiC power modules

The SiC integrated power module market was valued at USD1.92 billion in 2024. At a staggering CAGR of 27.1 %, the market is expected to hit USD13.19 billion in 2033. SiC integrated power modules are sold as fully SiC or hybrid SiC power modules.

SiC power modules are better suited for high-power and high-voltage applications (600 V, 1200 V, and 1800 V). GaN power modules are not suitable for high-power applications due to their lateral structure, lesser tolerance to short circuit, and increased cost of multilevel converters.

SiC power module applications include EV inverters, rail traction, large-scale photovoltaics, and three-phase converters. In conclusion, SiC power modules win in high-power applications such as EV, railway, and three-phase applications.

Winner of high frequency: GaN power modules

The GaN power module market was valued at USD1.75 billion in 2024. At a high CAGR of 18.7 %, the GaN power module market is expected to hit USD6.82 billion in 2033. GaN power modules are sold as half-bridge, full-bridge, and multi-phase types.

GaN power modules capture the market better for compact designs, faster switching speeds, and low voltages around 650 V. SiC power modules are not suitable in high-frequency applications because their higher switching charge, body-diode reverse recovery, and parasitics facilitate switching losses and EMI.

GaN power module applications include compact drivers, chargers, multilevel converters, totem-pole PFC, and many more. In conclusion, GaN power modules win in high-frequency 650 V applications.

References

• https://www.danfoss.com/en/about-danfoss/our-businesses/silicon-power/what-is-sic-power-module/

• https://www.wolfspeed.com/knowledge-center/article/enabling-system-upgrades-with-sic-technology-using-industry-standard-base-plate-less-packaging/#:~:text=The%20advantages%20of%20Silicon%20Carbide,frequencies%20at%20high%20bus%20voltages.

• https://www.avnet.com/americas/resources/article/the-undeniable-advantages-of-sic-technology-over-si/

• https://www.ti.com/technologies/gallium-nitride.html

• https://www.infineon.com/promo/gan-module

• https://www.trendforce.com/news/2025/07/03/news-tsmc-to-exit-gan-production-by-july-2027-reportedly-repurposes-fab-for-advanced-packaging/

• https://www.ti.com/lit/an/slyt801/slyt801.pdf?ts=1756030074583&ref_url=https%253A%252F%252Fwww.google.com%252F

• https://dataintelo.com/report/gallium-nitride-power-module-market

• https://dataintelo.com/report/silicon-carbide-integrated-power-module-market

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