This paper presents a highly integrated high power density design of a motor drive, utilizing integrated GaN power stages as well as novel current sensing ICs.

This work presents a highly-integrated GaN-based monolithic bidirectional switch (MBDS) with blocking voltage beyond 1200 V.

This paper aims to promote the integration of DC Semiconductor Circuit Breakers (SCCBs) into existing DC networks by ensuring reliability through accurate Remaining Useful Life (RUL) predictions.

This paper proposes a new gate driver that always achieves the fastest switching while keeping the surge voltage below the breakdown voltage.