The District Court Munich, Germany has ruled in favor of Infineon Technologies AG in a first instance patent infringement case concerning gallium nitride technology between Infineon and Innoscience. The case centers on the unauthorized use of Infineon’s patented GaN technologies by Innoscience.

Researchers from the University of Ottawa, NRC, and Fraunhofer ISE have achieved a significant breakthrough in photonic power conversion by developing innovative devices that convert 1446-nanometer laser light into electrical power with 53.6 % efficiency. This advancement significantly enhances the potential for long-distance power transmission via optical fibers, crucial for telecommunications and other applications.

Indium Corporation, a leading materials refiner, smelter, manufacturer, and supplier, today announced the global availability of WS-910 Flip-Chip Flux, a new water-soluble flip-chip dipping flux designed to meet the demands of cutting-edge semiconductor devices.

At PCIM Europe 2025, Dr. Dushan Boroyevich explained why today’s power infrastructure can’t scale and how intelligent, converter-based systems can replace it. He emphasized the urgent need for a transformation to software-defined, adaptive power networks to handle the growing demands from renewable energy sources and technological advancements like AI and electric vehicles.

The job of a regulator is to keep voltages in a compatible and safe range for all circuit components. Most regulators perform this function at the trade-off between high losses, unnecessary electrical noise, and low efficiency. There isn’t a single regulator type in power electronics — of course, there are many! Unlike other regulators, low-dropout regulators are heroes who won’t generate noise, or what you call EMI, to ruin your electronic system. The article describes LDO regulators and their use in power electronics.

At PCIM Europe 2025, Prof. Johann W. Kolar explained why the road to net zero will be longer, harder, and more material-intensive than expected. He highlighted the underestimation of essential factors such as storage, land, materials, and time in current models, emphasizing that overcoming these challenges is critical to meeting the global energy demand without exacerbating existing environmental problems.

Researchers have demonstrated O-band InAs quantum dot DBR lasers monolithically integrated on silicon photonics using an “in-pocket” heteroepitaxy process, combining two-step epitaxial growth with a polymer gap-fill to achieve low-loss coupling and high thermal stability.

Researchers have achieved a record +8.3 V threshold voltage in hydrogen-terminated diamond accumulation-channel FETs, marking a breakthrough for normally-off, high-power device design.

Nexperia has introduced a new series of five high-performance protection 1 V diodes that provide optimized protection for AC-coupled radio-frequency transmission lines against electrostatic discharge events, surge currents and short circuit conditions. These diodes – examples include the PESD1V0C1BSF and PESD1V0H1BSF – are ideal for safeguarding USB4 and ThunderboltTM interfaces found in various applications including cellular handsets, portable electronic devices, communication systems, as well as computers and other peripherals.

GlobalWafers America announced a new partnership with Apple to bolster the expanding U.S. semiconductor supply chain. The companies will work together to build demand for 300mm advanced silicon wafers manufactured at GWC’s flagship production facility in Sherman, Texas.