To provide higher efficiency for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 80 V TrenchFET® Gen IV n-channel power MOSFET in the PowerPAK® 8x8SW bond wireless (BWL) package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiEH4800EW offers 15 % lower on-resistance while reducing RthJC by 18 %.

Imec has set a new benchmark in RF transistor performance for mobile applications. They present a GaN MOSHEMT on silicon that achieves both record efficiency and output power for an enhancement-mode device operating at low supply voltage. These advancements are poised to revolutionize the capabilities of next-gen mobile technology.

Efficient Power Conversion Corporation, a global player in enhancement-mode gallium nitride power devices announces the release of the EPC9196, a high-performance 25 ARMS, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET. This innovation sets a new standard for efficiency and compact design in medium-voltage motor drive applications.

Vishay Intertechnology, Inc. has announced the release of its latest isolation amplifiers, the VIA0050DD, VIA0250DD, and VIA2000SD. These new devices offer enhanced performance for a wide range of industrial, automotive, and medical applications, where high precision, reliability, and compact size are critical.

“Josephson Junctions” are to “Superconductors” what “Transistors” are to “Semiconductors”! Built on a superconductive phenomenon called the Josephson Effect, Josephson Junctions revolutionize high-precision measurement and quantum computing. The article describes Josephson Junctions with their working principles, types, measurement capabilities, applications, technical challenges, and future scope.

Following the tenets of Moore’s Law has led to the development of highly advanced technologies. Can we harness this knowledge to find solutions to the most urgent problems facing humanity?

Surface treatments are essential in automotive power electronics, protecting components from corrosion, improving thermal management, and ensuring strong electrical and adhesive connections. These factors collectively enhance the durability and efficiency of electronic systems, paving the way for more reliable and longer-lasting vehicles.

GaN HEMT and SiC MOSFETs have attracted worldwide attention due to their efficiency and high-power performance. The article compares GaN HEMTs and SiC MOSFETs based on operation, properties, advantages, disadvantages, and applications.

Wolfspeed, Inc. has announced that, as part of its efforts to proactively strengthen its capital structure, it entered into a Restructuring Support Agreement with key lenders, including holders of more than 97 % of its senior secured notes, Renesas Electronics Corporation’s wholly owned U.S. subsidiary and convertible debtholders holding more than 67 % of the outstanding convertible notes.

University of Michigan researchers have unveiled a groundbreaking silicone that conducts electricity, challenging its traditional insulating role. This vibrant, flexible material paves the way for innovative applications in displays and wearable tech, offering a spectrum of colors and a new horizon for flexible electronics.