New high‑SOA MOSFET enables 48V hot‑swap in AI servers

POWER MOSFET New high‑SOA MOSFET enables 48V hot‑swap in AI servers

2025-12-08 From Alpha & Omega Semiconductor 2 min Reading Time

Related Vendors

ROHM Semiconductor GmbH

Rogers Corporation

CISSOID S.A.

Alpha and Omega Semiconductor Limited, a designer, developer, and supplier of power devices and modules, announced its AOLV66935, a 100V High Safe Operating Area (SOA) MOSFET in an LFPAK 8x8 package. It's designed as an solution for 48V Hot Swap architectures in AI servers. In addition to its SOA capability, the AOLV66935 Hot Swap MOSFET features very low on-resistance to meet these performance, efficiency and reliability challenges.

LFPAK 8×8 high‑SOA MOSFETs used in 48 V backplanes to control plug‑in transients and protect server power paths.(Source: Alpha & Omega Semiconductor) — LFPAK 8×8 high‑SOA MOSFETs used in 48 V backplanes to control plug‑in transients and protect server power paths.
(Source: Alpha & Omega Semiconductor)

The AOLV66935 utilizes AOS’ 100V AlphaSGT proprietary MOSFET technology that combines the advantages of trench technology for low on-resistance with high SOA capability. AOS has tested and characterized the SOA at 25°C as well at higher operating conditions of 125°C giving system architects the confidence that the device will operate reliably under harsh conditions. Available in AOS’ state-of-the-art packaging, the MOSFET’s LFPAK 8x8 gull-wing constructed package is 60 percent smaller compared to the TO-263 (D2PAK) package. It also features advanced clip technology with a high current rating to provide high inrush current capabilities. In addition, the copper clip and packaging technology used offers low thermal resistance for improved thermal management. The AOLV66935 is manufactured in IATF 16949-certified facilities, and its LFPAK 8x8 packaging is compatible with automated optical inspection (AOI) manufacturing requirements.

Furthermore, the AOLV66935 provides low power loss and reduced heat generation due to its leading low R_DS(on) of 1.86 milliohms maximum rating at Vgs=10V. All the advanced features and high current capabilities designed into the AOLV66935 MOSFET deliver the necessary robustness for enhanced thermal cycling in harsh conditions that is now required in the latest AI server applications.

Advanced MOSFET handles higher peak currents, delivering a cost-effective, high-performance, and enhanced reliability hot swap solution. (Source: Alpha and Omega Semiconductor Limited )

“To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability. AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8x8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required allowing designers to meet space limitations,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.

Part Number	Package	V_DS (V)	V_GS (±V)	T_J (°C)	Continuous Drain Current (A)		Pulsed Drain Current (A)	R_DS(ON) Max (mOhms) @10V
Part Number	Package	V_DS (V)	V_GS (±V)	T_J (°C)	@25°C	@100°C	@25°C	R_DS(ON) Max (mOhms) @10V
AOLV66935	LFPAK 8x8	100	20	175	334	236	1336	1.85

Follow us on LinkedIn

Have you enjoyed reading this article? Then follow us on LinkedIn and stay up-to-date with daily posts about the latest developments on the industry, products and applications, tools and software as well as research and development.

(ID:50653018)

Consent to the use of data for advertising purposes

I consent to the use of my email address to send editorial newsletters by Mesago Messe Frankfurt GmbH, Rotebühlstr. 83-85, 70178 Stuttgart, Germany including all of its affiliates within the meaning of Section 15 et seq. AktG (‘Mesago’). I have viewed lists of each group of affiliates here for the Mesago.
The content of the newsletter covers the products and services of all of the companies listed above including, for example, trade magazines and specialist books, events and exhibitions and event-related products and services, printed and digital media products and services such as additional (editorial) newsletters, competitions, lead campaigns, online and offline market research, technical web portals and e-learning courses. If my personal telephone number has also been collected, it may be used to send offers for the aforementioned products and services from the above companies, as well as for market research purposes.
If I wish to access protected content online on portals of Mesago including its affiliates within the meaning of Section 15 et seq. AktG, I must register with additional data in order to access that content. In return for this free access to editorial content, my data may be used in line with this declaration of consent for the purposes described herein.

Right to withdraw consent

I am aware that I can withdraw this consent at any time with future effect. My withdrawal of consent does not affect the lawfulness of processing performed based on my consent before its withdrawal. If I wish to withdraw my consent, I can send an email to Mesago at privacy@mesago.com. If I no longer wish to receive individual newsletters to which I have subscribed, I can also click on the unsubscribe link at the bottom of a newsletter. I can find more information on my right to withdraw, how to exercise this right and the consequences of my withdrawal in the Privacy policy Editorial newsletters section.

POWER MOSFET New high‑SOA MOSFET enables 48V hot‑swap in AI servers

Follow us on LinkedIn

Subscribe to the newsletter now

Don't Miss out on Our Best Content

Declaration of consent

Consent to the use of data for advertising purposes

Right to withdraw consent