Mitsubishi Electric to ship samples of XB series HVIGBT module

TRANSITORS Mitsubishi Electric to ship samples of XB series HVIGBT module

2025-04-09 From Mitsubishi Electric Corporation 2 min Reading Time

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Mitsubishi Electric Corporation has announced that it will begin shipping samples of its new XB Series high-voltage insulated-gate bipolar transistor module, a 3.3k-volt, 1500A high-capacity power semiconductor for large industrial equipment such as railway vehicles, on May 1.

Designed for highly efficient and powerful inverter systems in railway vehicles and other large industrial equipment. Find out more about this here.(Source: Mitsubishi Electric Corporation) — Designed for highly efficient and powerful inverter systems in railway vehicles and other large industrial equipment. Find out more about this here.
(Source: Mitsubishi Electric Corporation)

By adopting proprietary diode and insulated gate bipolar transistor (IGBT) elements, as well as a unique chip termination structure, the module's improved moisture resistance will help to improve the efficiency and reliability of inverters for large industrial equipment operating in diverse environments. Mitsubishi Electric will exhibit the XB Series HVIGBT module at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8.

The new 3.3kV/1500A XB Series HVIGBT module uses IGBT elements incorporating Mitsubishi Electric's proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT¹) structure.

Read more about the differences between inverters and converters in this article. (Source: BORIS - stock.adobe.com)

In particular, the module reduces total switching loss by approximately 15 %² compared to previous models, contributing to higher efficiency in inverters. It also expands tolerance in the reverse-recovery safe-operating area (RRSOA) by about 25 %³ compared to previous models, further enhancing inverter reliability. In addition, by using a new electric field relaxation structure⁴ and a surface charge control structure⁵ in the chip's termination area, Mitsubishi Electric has reduced the area's size by about 30 % while achieving about 20 times⁶ greater moisture resistance than existing products, contributing to more stable operation of inverters used in high-humidity environments. By further improving the efficiency and reliability of inverters for large industrial equipment operating in various environments, the module is expected to contribute to efforts to achieve carbon neutrality.

Notes

¹ Proprietary IGBT structure utilizing the carrier storage effect.

² Comparison of the existing CM1500HC-66R and the new product in terms of E_on + E_off + E_rec at Tj=150°C, V_CC=1800V, and I_C=1500A.

³ Comparison of the existing CM1500HC-66R and the new product in terms of Prr, which is the product of VCE and Irr in the RRSOA.

⁴ Proprietary structure with optimally arranged p-type semiconductor regions that gradually widen the spacing.

⁵ Proprietary structure where the semi-insulating film is in direct contact with the semiconductor region, ensuring stable charge dissipation.

⁶ Results of the condensation resistance verification test for XB Series and existing H-Series products with a voltage rating of 3.3kV and a current rating of 1200A.

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TRANSITORS Mitsubishi Electric to ship samples of XB series HVIGBT module

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