SATELLITE COMMUNICATION Mitsubishi Electric to ship compact, high-efficiency amplifiers for Ka-band SATCOM

From Mitsubishi Electric Corporation 1 min Reading Time

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Mitsubishi Electric Corporation announced that it will begin shipping samples of 8W and 14W gallium nitride monolithic microwave integrated circuit power amplifiers for use in Ka-band satellite-communication earth stations (SATCOM) from July 1.

Mitsubishi Electric's new GaN MMIC power amplifiers will enable smaller, lower-power Ka-band SATCOM earth stations for higher data capacity.(Source:  rottenman - stock.adobe.com)
Mitsubishi Electric's new GaN MMIC power amplifiers will enable smaller, lower-power Ka-band SATCOM earth stations for higher data capacity.
(Source: rottenman - stock.adobe.com)

While the mainstream frequency for satellite communications is currently the Ku-band (13GHz to 14GHz), the higher frequency Ka-band (27.5GHz to 31GHz) offers multi-beam technology and much wider bandwidth for transmitting more data. By adding more Ka-band products to its lineup, Mitsubishi Electric expects to meet the growing demand for high-capacity communications and contribute to smaller and more power-efficient satellite communications earth stations. These products will be exhibited in the USA at IEEE MTT-S International Microwave Symposium (IMS) 2024 in Washington, DC, on June 18-20.

Final stage circuitry example of transmitters for Ka-band satellite communication earth station.(Source:  Mitsubishi Electric Corporation)
Final stage circuitry example of transmitters for Ka-band satellite communication earth station.
(Source: Mitsubishi Electric Corporation)

The two new gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers will be shipped as customer-board-friendly bare chips. Suitable for emergency communications and Ka-band multi-carrier communications, they will support the power levels and frequencies required for Ka-band satellite communications transmitters capable of handling large amounts of data. In addition, thanks to a new GaN HEMT with high-output, high-efficiency, Mitsubishi Electric’s new chips achieve unsurpassed miniaturization and increased power added efficiency of more than 20% at maximum linear power.

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