WBG SEMICONDUCTORS How wide bandgap semiconductor materials are changing power electronics

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New materials are allowing the creation of faster, more powerful, energy-efficient, and more heat-resistant semiconductors. Wide bandgap semiconductor materials have the potential to transform power electronics and the world as we know it. But there are issues we must overcome before we can take full advantage of these remarkable materials.

Make it smaller, faster, and more powerful. This is the catch cry of the power electronics industry. Engineers are constantly searching for ways to enhance the performance, reliability, and energy efficiency of devices. Wide bandgap semiconductor materials are now opening new possibilities for devices that are lighter, can provide more voltage, withstand higher temperatures, and use energy more efficiently.

Since the 1950s, the power electronics industry has relied on conventional silicon as the base material for semiconductors. However, as the demand for miniaturized, incredibly powerful devices increases, the limitations of legacy silicon are becoming more and more apparent. Despite overtaking germanium as the preferred material for semiconductors, silicon is now being outpaced by a new generation of wide bandgap semiconductor materials. Semiconductors made from silicon carbide (SiC) and gallium nitride (GaN) have band gaps of approximately three times that of silicon.

The astonishing properties of wide bandgap semiconductor materials are revolutionizing how devices are designed. These incredible materials are allowing us to go beyond the limitations of silicon-based transistors. But can wide bandgap semiconductor materials deliver on their seemingly massive potential? Or are there complications that will hamper the future applications of wide bandgap materials?

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The remarkable properties of wide bandgap materials

Transistors are the key to increasing switching rates and power. Engineers are constantly researching transistor materials that allow for faster switching speeds, higher rates of voltage, and wider bandgap widths. The bandgap of a material is the difference between the amounts of energy needed to move electrons from the highest occupied state of the valence band to the lowest unoccupied state of the conduction band. The bandgap of legacy silicon is 1.12 eV (electron volt). Wide bandgap materials need high amounts of energy, up to 3.2 eV, to conduct. Wide bandgap semiconductors are constructed with smaller lattice constants, so the binding strength of the atoms is increased. The end result is a higher electric breakdown field and increased thermal conductivity. This allows wide bandgap semiconductors to be much thinner than silicon semiconductors and yet sustain the same amount of applied voltage. They have much lower conduction levels and a reduced loss of energy due to switching. Switching rates can be increased without losing efficiency.

Silicon semiconductors often fail due to overheating. Wide bandgap semiconductors have much better heat resistance, so are more reliable, durable, and long-lasting than silicon semiconductors. The higher voltage capabilities combined with the faster switching rates and increased ability to withstand thermal stress mean that wide bandgap semiconductors can operate in high-power designs more efficiently, for longer periods, and in a much smaller format.

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The main applications of wide bandgap materials

There is one main point of difference between SiC and GaN: the speed at which the electrons can move. GaN has an electron mobility of 2,000 cm2/Vs, while SiC is rated at 650 cm2/Vs. GaN is most often used for high-frequency low-power applications while SiC is used in high-voltage, high-power applications. The characteristics of both SiC and GaN wide bandgap semiconductors are ideal for power electronic usage. Because they can sustain maximum efficiency at high temperatures and voltages, SiC and GaN wide bandgap semiconductors are now common components in inverters, converters, and rectifiers. As well as improving consumer electronics and manufacturing, there are numerous aerospace and military applications for wide bandgap semiconductors.

The automotive industry is making good use of wide bandgap semiconductors. Both SiC and GaN are used for electric vehicle charging stations, battery management systems, and on-board chargers. SiC power modules are being used to enhance the efficiency of electric vehicle drivetrains.

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The renewable energy sector is taking up the use of wide bandgap semiconductors in a major way. They are used in grid systems, as photovoltaic inverters, and in wind turbine systems. Wide bandgap semiconductors can reduce losses by 50 % when converting energy from renewable sources. Experts believe that wide bandgap semiconductors have the potential to drastically reduce utility power transformers and allow for the development of high-voltage DC power lines.

Wide bandgap semiconductors are also ideal for high-frequency applications such as RF amplifiers and microwave systems. The ability of wide bandgap semiconductors to greatly improve data transmission can enhance communication systems and high-power radar systems. GaN semiconductors are often used in LED lighting systems, which provide brighter lighting for longer periods using less energy than traditional lighting.

Given the broad applications of wide bandgap semiconductor materials and the impact these applications may have, the uptake of SiC and GaN seems assured. There are, however, some issues that need to be addressed.

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Future challenges of wide bandgap materials applications

The potential of wide bandgap semiconductors is immense. This technology could pave the way for the next generation of power electronics. The worldwide wide bandgap semiconductors market was estimated to have a value of US $1.52 billion as of 2022. With a forecast compound annual growth rate (CAGR) of 12.6 %, the industry is expected to be worth over US $3.5 billion by 2030.

Unfortunately, despite the huge advantages of wide bandgap semiconductors, there are challenges to be overcome. Currently, manufacturing high-quality wide bandgap materials on an industrial scale is resource-intensive and costly. Much more so than the manufacturing of legacy silicon semiconductors.

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There are also reliability issues related to wide bandgap semiconductors. Gate oxide degradation and crystal defects are two major issues that need to be addressed.
Compatibility and system integration pose a problem. Complex systems using silicon semiconductors must often be redesigned to be suitable for wide bandgap semiconductors. Housing materials are often unable to withstand the temperatures generated by devices powered by wide bandgap semiconductors.

However, the complexity of these issues seems insignificant when compared to the benefits of wide bandgap semiconductor materials. With creativity and determination, we can unlock the potentialities of SiC and GaN semiconductors. Our future may depend on it.

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