The increasing electrification of high-power applications in various environments leads to more complex mission profiles and reliability issues for power semiconductor devices. A potential reason is corrosion mechanisms induced by contaminants like hydrogen-sulphide (H2S) or similar species. Unfortunately, the mechanisms are not fully correlated to the surrounding environment and do not follow usual degradation models. While the improvement of degradation models and reproducible testing methods was part of recent investigations, increasing the robustness of the modules has not yet been.