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Jul 22, 2021
ROHM’s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT
Solving the gate breakdown voltage problem of GaN devices contributes to lower power consumption and greater miniaturization of power supplies for base stations and data centers.
ROHM developed the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices – optimized for power supply circuits in industrial and communication equipment.
https://www.rohm.com/news-detail?news-title=150v-gan-hemt&defaultGroupId=false
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