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Apr 7, 2025

Gallium Nitride HEMT Epiwafer from DOWA

Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices. DOWA has achieved high voltage resistance and good flatness on the Gallium Nitride HEMT Epiwafers using our proprietary buffer layers. (GaN on Si HEMT Epiwafers)

DOWA is also engaged in the development of p-GaN cap layers and AlGaN DH structure for the realization of normally-off HEMT Epiwafers. We also handle GaN Epiwafers on silicon carbide (SiC) and sapphire and AIN templates for high-quality LED (on sapphire wafer).

Applications (GaN on Si HEMT Epiwafer)

  • For power semiconductors: Inverter and AC-DC converter
  • For high-frequency devices: For mobile phone base stations


Product features（GaN on Si HEMT Epiwafer）

  • High voltage resistance (1000V) and low leak current (1E-6A)
  • Crack-free
  • Good bow feature (Bow < 50μm)
  • Wafer size (3, 4, and 6 inches)
  • Capable of handling thick films (4.8μm)
  • p-GaN cap layer and alGaN DH structure

Get more information about the product characteristics here: Gallium Nitride HEMT Epiwafer | DOWA ELECTRONICS MATERIALS CO., LTD.