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diotec (Diotec Semiconductor AG)

Diotec Semiconductor AG

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Feb 18, 2025

Harnessing Next-Gen Efficiency: The Advances of SiC MOSFET Technology

Diotec Semiconductor is introducing their newest Silicon Carbide (SiC) MOSFET, DIF120SIC022/-AQ in the TO-247-4L package with an impressively low RDS(on) of 22 mΩ.

The fourth lead of the DIF120SIC022/-AQ, the so-called Kelvin-Source, significantly reduces switching losses and enhances system efficiency, making it the ideal choice for:

  • Photovoltaic systems
  • Industrial machinery
  • Automotive applications
  • Power conversion systems

Traditional Si-MOSFETs are not optimally efficient in high-power, fast-switching environments. SiC MOSFETs represent the ultimate solution, offering the following benefits

  • High breakdown voltage
  •  Improved switching speed
  • Less susceptibility to self-destruction
  • Reduced switching losses for compact & reliable designs 

By integrating SiC MOSFETs, engineers can drive innovation and transform the impossible into reality. Ready to revolutionize your power applications? Learn more about our SiC technology today!