Antonio Fernandez Sanchez

Indium gallium arsenide (InGaAs) has become a cornerstone material for near-infrared optoelectronics, enabling applications from LIDAR and Raman spectroscopy to high-speed optical communication. This article explores why InGaAs is uniquely suited for the short-wave infrared spectrum and takes a closer look at its growing role in avalanche photodiodes (APDs).

This article introduces the technology of so-called HEMTs or high electron mobility transistors. These devices represent an important evolution in transistor design and have become key components in modern high-frequency and microwave electronics. Thanks to their outstanding performance, HEMTs are widely used in low-noise amplifiers (LNAs) as well as in power applications.