POWER MOSFET 600v super junction mosfet platform targets high-efficiency power conversion

Alpha and Omega Semiconductor Limited (AOS), a supplier of discrete power devices, wide band gap power devices, power management ICs, and modules, unveiled its αMOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the newly developed platform is AOS’ AOTL037V60DE2.

600V MOSFET, designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems.

The design challenges of today’s mid‑ to high‑power switched‑mode power supplies (SMPS) and solar inverter systems can be distilled into four key requirements: the need for higher efficiency, greater power density, lower overall system cost, and uncompromised robustness. To meet these expectations, High‑Voltage Super Junction MOSFETs have become the preferred devices for critical topologies, including the slow leg of totem‑pole PFC, LLC resonant converters, PSFB, and cyclo‑converters.

AOS engineered its advanced αMOS E2 High‑Voltage Super Junction MOSFET platform with a robust intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short‑circuits or start‑up transients.

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The AOTL037V60DE2, available in a TOLL package, features a maximum RDS(ON) of 37 milliohms. In evaluations conducted by AOS’ application engineering team, the body diode ruggedness of this αMOS E2 MOSFET demonstrated the ability to withstand di/dt = 1300 A/µs under specific forward current (IF) conditions at a junction temperature of 150 °C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short‑Circuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater system‑level reliability, ensuring robust performance even under abnormal operating scenarios.

“We designed this platform and the first high-voltage MOSFET to address the needs of traditional AC/DC power supplies, as well as DC/DC converters and DC/AC inverters, where achieving high power density and efficiency remains a critical challenge. Leveraging AOS’ extensive MOSFET engineering expertise, we know the breakthrough capabilities of αMOS E2 High‑Voltage Super Junction MOSFET platform and the AOTL037V60DE2 solve these challenges enabling mid- to high-power application designers of power supplies, solar PV inverters, and DC/DC converters to effectively satisfy today’s and future power efficiency, durability and lower cost demands,” said Simon Yu, Senior Product Line Manager at AOS.

Technical highlights

• Optimized for soft‑switching topologies with exceptionally low switching losses

• Rugged body diode featuring reduced Qrr for demanding and high‑stress applications

• Enhanced robustness with strong UIS, inrush current handling, and wide SOA capabilities

• Designed to prevent self-turn-on, ensuring reliable operation under dynamic conditions

• Suitable for Totem Pole PFC, LLC, PSFB, and CrCM H-4/Cyclo Inverter applications